Effects of x-ray and gamma-ray irradiation on the optical properties of quantum dots immobilized in porous silicon

Girija Gaur; Dmitry Koktysh; Daniel M. Fleetwood; Robert A. Reed; Robert A. Weller; Sharon M. Weiss

doi:10.1117/12.2015595

29 May 2013 Effects of x-ray and gamma-ray irradiation on the optical properties of quantum dots immobilized in porous silicon

Girija Gaur, Dmitry Koktysh, Daniel M. Fleetwood, Robert A. Reed, Robert A. Weller, Sharon M. Weiss

Author Affiliations +

Proceedings Volume 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V; 87252D (2013) https://doi.org/10.1117/12.2015595
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

The effects of X-ray and gamma irradiation on the optical properties of CdTe/CdS quantum dots (QDs) immobilized in a functionalized porous silicon film have been investigated via continuous wave and time-resolved photoluminescence measurements. Carrier lifetimes of the QDs and photoluminescence intensities decrease with increasing exposure dose from 500 krad(SiO₂) to 16 Mrad(SiO₂).

Citation Download Citation

Girija Gaur, Dmitry Koktysh, Daniel M. Fleetwood, Robert A. Reed, Robert A. Weller, and Sharon M. Weiss "Effects of x-ray and gamma-ray irradiation on the optical properties of quantum dots immobilized in porous silicon", Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 87252D (29 May 2013); https://doi.org/10.1117/12.2015595

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