Effects of x-ray and gamma-ray irradiation on the optical properties of quantum dots immobilized in porous silicon

Girija Gaur; Dmitry Koktysh; Daniel M. Fleetwood; Robert A. Reed; Robert A. Weller; Sharon M. Weiss

doi:10.1117/12.2015595

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29 May 2013 Effects of x-ray and gamma-ray irradiation on the optical properties of quantum dots immobilized in porous silicon

Girija Gaur, Dmitry Koktysh, Daniel M. Fleetwood, Robert A. Reed, Robert A. Weller, Sharon M. Weiss

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Proceedings Volume 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V; 87252D (2013) https://doi.org/10.1117/12.2015595
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

The effects of X-ray and gamma irradiation on the optical properties of CdTe/CdS quantum dots (QDs) immobilized in a functionalized porous silicon film have been investigated via continuous wave and time-resolved photoluminescence measurements. Carrier lifetimes of the QDs and photoluminescence intensities decrease with increasing exposure dose from 500 krad(SiO₂) to 16 Mrad(SiO₂).

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Girija Gaur, Dmitry Koktysh, Daniel M. Fleetwood, Robert A. Reed, Robert A. Weller, and Sharon M. Weiss "Effects of x-ray and gamma-ray irradiation on the optical properties of quantum dots immobilized in porous silicon", Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 87252D (29 May 2013); https://doi.org/10.1117/12.2015595

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