Recent advances in power scaling of high-power optically-pumped semiconductor lasers for ultrashort pulse generation and continuous wave single frequency operation

Alexandre Laurain; Maik Scheller; Tsuei-Lian Wang; Jorg Hader; Jerome V. Moloney; Bernd Heinen; Bernardette Kunert; Wolfgang Stolz

doi:10.1117/12.2018310

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23 May 2013 Recent advances in power scaling of high-power optically-pumped semiconductor lasers for ultrashort pulse generation and continuous wave single frequency operation

Alexandre Laurain, Maik Scheller, Tsuei-Lian Wang, Jorg Hader, Jerome V. Moloney, Bernd Heinen, Bernardette Kunert, Wolfgang Stolz

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Proceedings Volume 8733, Laser Technology for Defense and Security IX; 873303 (2013) https://doi.org/10.1117/12.2018310
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

We report on our research in power scaling VECSEL around 1 μm to exceed 100W per chip. Recently, we have utilized these optimized VECSEL chips to achieve a new record for a mode-locked VECSEL. The output power of the laser was 3.4W. This corresponds to a pulse energy of 7.5nJ and a pulse peak power of 13.3kW. Both are record values for a semiconductor laser in the femtosecond regime. These optimized structures have also been used to demonstrate high power operation with a highly coherent TEM₀₀ mode and to demonstrate a record single frequency output power of 15W.

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Alexandre Laurain, Maik Scheller, Tsuei-Lian Wang, Jorg Hader, Jerome V. Moloney, Bernd Heinen, Bernardette Kunert, and Wolfgang Stolz "Recent advances in power scaling of high-power optically-pumped semiconductor lasers for ultrashort pulse generation and continuous wave single frequency operation", Proc. SPIE 8733, Laser Technology for Defense and Security IX, 873303 (23 May 2013); https://doi.org/10.1117/12.2018310

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