Paper
17 May 2013 MEMS sensors for mm-range displacement measurements with sub-nm resolution
Vladimir T. Stavrov, Vencislav M. Todorov, Assen A. Shulev, Chavdar M. Hardalov
Author Affiliations +
Proceedings Volume 8763, Smart Sensors, Actuators, and MEMS VI; 87632G (2013) https://doi.org/10.1117/12.2017381
Event: SPIE Microtechnologies, 2013, Grenoble, France
Abstract
It is challenging to provide contact measurements of travel in mm-range with nm/sub-nm resolution. It is even more complex to perform such measurements in static regime. In order to respond to the need for a simple, reliable and costeffective tool for contact travel measurements in mm-range with nm/sub-nm resolution, test MEMS sensor with sidewall embedded piezoresistors have been developed. The sensor comprises of two outer members having thickness of 270μm and two symmetrical sets of in-plane compliant elements: differential springs and displacement detection cantilevers, having thickness of 12μm. The MEMS devices have been bonded directly on low-noise amplifier PCB. For detailed characterization of the sensors in mm-travel range, two different experimental setups have been used. Measurements of 0.6 mm travel range at 1nm resolution have been demonstrated experimentally.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir T. Stavrov, Vencislav M. Todorov, Assen A. Shulev, and Chavdar M. Hardalov "MEMS sensors for mm-range displacement measurements with sub-nm resolution", Proc. SPIE 8763, Smart Sensors, Actuators, and MEMS VI, 87632G (17 May 2013); https://doi.org/10.1117/12.2017381
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Cited by 4 scholarly publications.
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KEYWORDS
Sensors

Microelectromechanical systems

Deep reactive ion etching

Silica

Manufacturing

Metals

Bridges

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