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17 May 2013 Pressure dependence of the quality factor of piezoelectrically driven AlN/Si-microcantilevers
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Proceedings Volume 8763, Smart Sensors, Actuators, and MEMS VI; 876334 (2013) https://doi.org/10.1117/12.2017353
Event: SPIE Microtechnologies, 2013, Grenoble, France
Abstract
In this work, the fabrication process of piezoelectric AlN cantilevers is presented. The cantilevers were electrically characterized in a vacuum chamber offering the possibility to close-loop control the back pressure from atmospheric conditions down to 5x10-3 mbar. The quality factor (Q factor) is an important figure of merit to evaluate the performance of micro-resonators. In particular, two different modes were detected and analyzed. The first bending mode detected at 19.5 kHz has a quality factor of 470 at atmospheric pressure which increases continuously to 985 at 1x10-1 mbar. The corresponding resonant frequency shifted from 19.500 kHz at atmospheric pressure to 19.573 kHz at 5 mbar. Below this pressure level, the resonance frequency stays unaffected within the measurement accuracy. The second bending mode detected at 117.264 kHz exhibits a quality factor of about 570 at atmospheric pressure increasing continuously to 1275 at 1x10-1 mbar. In agreement with the other resonant frequency under investigation the corresponding resonant frequency decreased from 117.264 kHz at atmospheric pressure to 117.630 kHz at 5 mbar.
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A. Ababneh, A. N. Al-Omari, H. C. Qiu, T. Manzaneque, J. Hernando, J. L. Sánchez-Rojas, A. Bittner, U. Schmid, and H. Seidel "Pressure dependence of the quality factor of piezoelectrically driven AlN/Si-microcantilevers", Proc. SPIE 8763, Smart Sensors, Actuators, and MEMS VI, 876334 (17 May 2013); https://doi.org/10.1117/12.2017353
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