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22 May 2013 Phase-shift in waveguide integrated Ge quantum wells
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Abstract
We report on the electro-refractive effect in Ge/SiGe multiple quantum wells grown by low energy plasma enhanced chemical vapor deposition (LEPECVD). The electro-refractive effect was experimentally characterized by the shift of Fabry-Perot fringes in the transmission spectra of a 64 μm long slab waveguide. A refractive index variation up to 1.3 × 10-3 was measured with an applied electric field of 88 kV/cm at 1475 nm, 50 meV below the excitonic resonance, with a VπLπ figure of merit of 0.46 V×cm. The device performances are promising for the realization of Mach Zehnder modulators in the Ge-Si material platform.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jacopo Frigerio, Papichaya Chaisakul, Delphine Marris-Morini, Stefano Cecchi, Mohamed-Said Rouifed, Giovanni Isella, and Laurent Vivien "Phase-shift in waveguide integrated Ge quantum wells", Proc. SPIE 8767, Integrated Photonics: Materials, Devices, and Applications II, 87670B (22 May 2013); https://doi.org/10.1117/12.2017249
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