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18 May 1988 Silicon-Compatible Infrared Sensors Based On Epitaxial Silicides
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Proceedings Volume 0877, Micro-Optoelectronic Materials; (1988)
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
The application of molecular beam epitaxy to the growth of infrared sensor structures employing either metallic or semiconducting silicides is being investigated. Thin, heavily Ga-doped layers have been used to modify the cut-off wavelength of Schottky diodes in CoSi2 on Si(111). The cut-off wavelengths of n-type diodes have been decreased from 2.1 to 1.4 pm, while the cut-off wavelengths of p-type diodes have been increased from 3.5 to 5.0 Rm. In addition, epitaxial growth of CrSi2, a small bandgap semiconductor which might be used as an intrinsic detector, is being explored. Initial results show that CrSi2 forms islands on Si(111) which commonly exhibit two different epitaxial relationships with the substrate. These orientations are related by a 30° rotation about the surface normal.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R W Fathauer, T L Lin, P J Grunthaner, J Maserjian, P O Andersson, K T Chang, J H Mazur, and D N Jamieson "Silicon-Compatible Infrared Sensors Based On Epitaxial Silicides", Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988);

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