Inductively coupled plasma etching of BZN thin films in SF6/Ar plasmas

Gang Wang; Ping Li; Guojun Zhang; Wei Li; Liping Dai; Jing Jiang

doi:10.1117/12.2013904

13 March 2013 Inductively coupled plasma etching of BZN thin films in SF6/Ar plasmas

Gang Wang, Ping Li, Guojun Zhang, Wei Li, Liping Dai, Jing Jiang

Proceedings Volume 8783, Fifth International Conference on Machine Vision (ICMV 2012): Computer Vision, Image Analysis and Processing; 87830Q (2013) https://doi.org/10.1117/12.2013904
Event: Fifth International Conference on Machine Vision (ICMV 12), 2012, Wuhan, China

Abstract

Etching mechanisms and characteristics of bismuth zinc niobate (BZN) thin films were investigated in inductively coupled SF₆/Ar plasmas. The influences of various etching parameters including the gas flow ratio, process pressure, and ICP power on the etching results were analyzed. It is found that the chemical etching with F radicals was more effective than the physical sputtering etching with Ar ions for the inductively coupled plasma etching of BZN thin films. The mechanism of ion assisted chemical etching of BZN thin films in SF₆/Ar plasmas was proposed. A maximum etch rate of approximately 43.15 nm/min for the BZN thin film was obtained at the optimum etching conditions: 3/2 for the SF₆/Ar gas flow ratio, 10 mTorr for the process pressure, and 600 W for the ICP power. The surface morphology of the etched BZN thin film was observed, where was smooth and clean and no post-etch residues were remained.

Citation Download Citation

Gang Wang, Ping Li, Guojun Zhang, Wei Li, Liping Dai, and Jing Jiang "Inductively coupled plasma etching of BZN thin films in SF6/Ar plasmas", Proc. SPIE 8783, Fifth International Conference on Machine Vision (ICMV 2012): Computer Vision, Image Analysis and Processing, 87830Q (13 March 2013); https://doi.org/10.1117/12.2013904

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