Paper
13 May 2013 CCD camera-based analysis of thin film growth in industrial PACVD processes
G. Zauner, T. Schulte, C. Forsich, Daniel Heim
Author Affiliations +
Abstract
In this paper we present a method for the characterization of (semi-transparent) thin film growth during PACVD processes (plasma assisted chemical vapour deposition), based on analysis of thermal radiation by means of nearinfrared imaging. Due to interference effects during thin film growth, characteristic emissivity signal variations can be observed which allow very detailed spatio-temporal analysis of growth characteristics (e.g. relative growth rates). We use a standard CCD camera with a near-infrared band-pass filter (center wavelength 1030 nm, FWHM 10nm) as a thermal imaging device. The spectral sensitivity of a Si-CCD sensor at 1μm is sufficient to allow the imaging of thermal radiation at temperatures above approx. 400°C, whereas light emissions from plasma discharges (which mainly occur in the visible range of the electromagnetic spectrum) barely affect the image formation.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Zauner, T. Schulte, C. Forsich, and Daniel Heim "CCD camera-based analysis of thin film growth in industrial PACVD processes", Proc. SPIE 8788, Optical Measurement Systems for Industrial Inspection VIII, 87882U (13 May 2013); https://doi.org/10.1117/12.2020969
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
CCD cameras

Image processing

Thin film growth

Plasma

Temperature metrology

Oxides

Cameras

Back to Top