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9 August 2013 Simulation of a silicon nanowire array texturing structure for photovoltaic device
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Proceedings Volume 8793, Fourth International Conference on Smart Materials and Nanotechnology in Engineering; 87931P (2013) https://doi.org/10.1117/12.2026775
Event: Fourth International Conference on Smart Materials and Nanotechnology in Engineering, 2013, Gold Coast, Australia
Abstract
We have simulated a photovoltaic (PV) pn junction where a texturing structure from Silicon nanowires (NWs) is added. While the NWs diameter was kept constant at a value of 100 nm, their lengths were varied over the range from 1 μm to 100 μm. A noticeable enhancement in the device efficiency is found. This improvement is due to that the added texture has significantly decreased the optical reflectance and increased the optical absorption of the surface.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Kirah "Simulation of a silicon nanowire array texturing structure for photovoltaic device ", Proc. SPIE 8793, Fourth International Conference on Smart Materials and Nanotechnology in Engineering, 87931P (9 August 2013); https://doi.org/10.1117/12.2026775
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