Photoinduced inverse spin-Hall effect in Pt/GaAs and Pt/Ge

F. Bottegoni; A. Ferrari; G. Isella; S. Cecchi; M. Finazzi; F. Ciccacci

doi:10.1117/12.2025497

26 September 2013 Photoinduced inverse spin-Hall effect in Pt/GaAs and Pt/Ge

F. Bottegoni, A. Ferrari, G. Isella, S. Cecchi, M. Finazzi, F. Ciccacci

Proceedings Volume 8813, Spintronics VI; 88131C (2013) https://doi.org/10.1117/12.2025497
Event: SPIE NanoScience + Engineering, 2013, San Diego, California, United States

Abstract

We performed photoinduced inverse spin Hall effect (ISHE) measurements on Pt/GaAs(001) and Pt/Ge(001) junctions at room temperature. The spin-oriented electrons, photogenerated at the direct gap of the semiconductor using circularly polarized light, provide a net spin current which yields an electromotive field E_ISHE in the Pt layer. Such a signal is clearly detected in GaAs, where electrons diffuse around the Γ point of the Brillouin zone, and also in Ge, despite the strong Γ to L scattering which electrons undergo in the Ge conduction band. The ISHE signal dependence on the exciting photon energy is investigated in both junctions.

Citation Download Citation

F. Bottegoni, A. Ferrari, G. Isella, S. Cecchi, M. Finazzi, and F. Ciccacci "Photoinduced inverse spin-Hall effect in Pt/GaAs and Pt/Ge", Proc. SPIE 8813, Spintronics VI, 88131C (26 September 2013); https://doi.org/10.1117/12.2025497

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