Numerical modeling of scattering type scanning near-field optical microscopy

Arvindvivek Ravichandran; Edward C. Kinzel; James C. Ginn; Jeffery A. D'Archangel; Eric Z. Tucker; Brian A. Lail; Markus B. Raschke; Glenn D. Boreman

doi:10.1117/12.2023513

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20 September 2013 Numerical modeling of scattering type scanning near-field optical microscopy

Arvindvivek Ravichandran, Edward C. Kinzel, James C. Ginn, Jeffery A. D'Archangel, Eric Z. Tucker, Brian A. Lail, Markus B. Raschke, Glenn D. Boreman

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Proceedings Volume 8815, Nanoimaging and Nanospectroscopy; 88150S (2013) https://doi.org/10.1117/12.2023513
Event: SPIE NanoScience + Engineering, 2013, San Diego, California, United States

Abstract

Apertureless scattering-type Scanning Near-field Optical Microscopy (s-SNOM) has been used to study the electromagnetic response of infrared antennas below the diffraction limit. The ability to simultaneously resolve the phase and amplitude of the evanescent field relies on the implementation of several experimentally established background suppression techniques. We model the interaction of the probe with a patch antenna using the Finite Element Method (FEM). Green's theorem is used to predict the far-field, cross-polarized scattering and to construct the homodyne amplified signal. This approach allows study of important experimental phenomena, specifically the effects of the reference strength, demodulation harmonic, and detector location.

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Arvindvivek Ravichandran, Edward C. Kinzel, James C. Ginn, Jeffery A. D'Archangel, Eric Z. Tucker, Brian A. Lail, Markus B. Raschke, and Glenn D. Boreman "Numerical modeling of scattering type scanning near-field optical microscopy", Proc. SPIE 8815, Nanoimaging and Nanospectroscopy, 88150S (20 September 2013); https://doi.org/10.1117/12.2023513

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