Predefined planar structures in semiconductor surfaces patterned by NSOM lithography

Ivana Lettrichova; Dusan Pudis; Agata Laurencikova; Stanislav Hasenohrl; Jozef Novak; Jaroslava Skriniarova; Jaroslav Kovac

doi:10.1117/12.2023211

26 September 2013 Predefined planar structures in semiconductor surfaces patterned by NSOM lithography

Ivana Lettrichova, Dusan Pudis, Agata Laurencikova, Stanislav Hasenohrl, Jozef Novak, Jaroslava Skriniarova, Jaroslav Kovac

Author Affiliations +

Proceedings Volume 8816, Nanoengineering: Fabrication, Properties, Optics, and Devices X; 881619 (2013) https://doi.org/10.1117/12.2023211
Event: SPIE NanoScience + Engineering, 2013, San Diego, California, United States

Abstract

Near-field scanning optical microscope (NSOM) lithography is one of optical technologies for planar structure fabrication, where exposure process is performed by optical near field produced at tip of fiber probe. Maskless exposure of defined regions is performed so that different periodic and predefined arrangement can be achieved. In this contribution, NSOM lithography is presented as effective tool for semiconductor device surface patterning. Non-contact mode of NSOM lithography was used to pattern planar predefined structures in GaAs, AlGaAs and GaP surfaces. In this way, GaAs/AlGaAs-based LED with patterned structure in the emitting surface was prepared, where patterned air holes show enhancement of radiation in comparison with the surrounding surface. Furthermore, NSOM in combination with lift-off technique was used to prepare metal-catalyst particles on GaP substrate for subsequent growth of GaP nanowires which can be used in photovoltaic applications.

Citation Download Citation

Ivana Lettrichova, Dusan Pudis, Agata Laurencikova, Stanislav Hasenohrl, Jozef Novak, Jaroslava Skriniarova, and Jaroslav Kovac "Predefined planar structures in semiconductor surfaces patterned by NSOM lithography", Proc. SPIE 8816, Nanoengineering: Fabrication, Properties, Optics, and Devices X, 881619 (26 September 2013); https://doi.org/10.1117/12.2023211

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