Paper
3 October 2013 Investigation of maple-deposited DNA films for graphene-based device applications
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Abstract
In this study, we investigate a new technique to fabricate DNA-CTMA films with tunable properties. MAPLE is, for the first time, explored to deposit DNA-CTMA dielectric films on top of epitaxially grown graphene on silicon carbide (SiC) substrate. Silicon dioxide (SiO2) is commonly used as a gate insulator in graphene based field effect transistors (GFETs) in a top gate configuration. The high temperature deposition of SiO2 on graphene is known to cause damage to the surface of the graphene leading to poor device operation. We propose an alternative gate insulator based on a bio-organic (DNA-CTMA) material processed and deposited at room temperature (RT) using MAPLE. Hall measurements run before and after DNA-CTMA deposition showed no change in the type of conductivity as well as charge carrier mobility.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adrienne Williams, Angela Campbell, Fahima Ouchen, Weijie Lu, John Grant, and James Grote "Investigation of maple-deposited DNA films for graphene-based device applications", Proc. SPIE 8817, Nanobiosystems: Processing, Characterization, and Applications VI, 88170L (3 October 2013); https://doi.org/10.1117/12.2027218
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Cited by 1 scholarly publication.
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KEYWORDS
Graphene

Field effect transistors

Silicon carbide

Dielectrics

Thin films

Silica

Chemical species

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