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19 September 2013 Vapor-liquid-solid growth of ⟨110⟩ silicon nanowire arrays
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The epitaxial growth of <110> silicon nanowires on (110) Si substrates by the vapor-liquid-solid growth process was investigated using SiCl4 as the source gas. A high percentage of <110> nanowires was obtained at high temperatures and reduced SiCl4 partial pressures. Transmission electron microscopy characterization of the <110> Si nanowires revealed symmetric V-shaped {111} facets at the tip and large {111} facets on the sidewalls of the nanowires. The symmetric {111} tip faceting was explained as arising from low catalyst supersaturation during growth which is expected to occur given the near-equilibrium nature of the SiCl4 process. The predominance of {111} facets obtained under these conditions promotes the growth of <110> SiNWs.
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Sarah M. Eichfeld, Mel F. Hainey Jr., Haoting Shen, Chito E. Kendrick, Emily A. Fucinato, Joanne Yim, Marcie R. Black, and Joan M. Redwing "Vapor-liquid-solid growth of ⟨110⟩ silicon nanowire arrays", Proc. SPIE 8820, Nanoepitaxy: Materials and Devices V, 88200I (19 September 2013);

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