Paper
19 September 2013 Single-polycrystalline core-shell silicon nanowires grown on copper
Kate J. Norris, Junce Zhang, David M. Fryauf, Elane Coleman, Gary S. Tompa, Nobuhiko P. Kobayashi
Author Affiliations +
Abstract
The growth of silicon core-shell nanowires with a crystalline-core and a polycrystalline-shell on copper substrates pretreated with carbon via Plasma Enhanced Chemical Vapor Deposition (PECVD) was demonstrated. The nanowire diameters range from 120 to 250nm with 10-20nm crystalline cores. The overall large diameter enables easier methods of forming an electrical/thermal contact while the small core maintains the benefits of nanowires. By altering the copper surface with carbon, highly dense silicon nanowire networks can be directly grown on copper substrates, which could allow for efficient and economical incorporation of silicon nanowires into such applications as thermoelectric devices.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kate J. Norris, Junce Zhang, David M. Fryauf, Elane Coleman, Gary S. Tompa, and Nobuhiko P. Kobayashi "Single-polycrystalline core-shell silicon nanowires grown on copper", Proc. SPIE 8820, Nanoepitaxy: Materials and Devices V, 882013 (19 September 2013); https://doi.org/10.1117/12.2024283
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Cited by 1 scholarly publication.
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KEYWORDS
Nanowires

Silicon

Copper

Carbon

Thermoelectric materials

Crystals

Silicon carbide

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