Paper
25 September 2013 Down-conversion effect on GaAs single junction solar cell using CdSe quantum dots
Author Affiliations +
Abstract
Solar energy has been sought as one of the prominent candidates among the energy harvesting methods. The energy conversion efficiency of solar cell is limited by its ability of harvesting energy from limited range in solar energy spectrum. We approach this issue by using the down-conversion effect with conventional CdSe quantum dots (QDs), increasing probability of electron-hole generation in designated solar cell. In our study, we fabricated GaAs single junction solar cells and applied QDs for down-conversion. We examine the effects of such application on the solar cell properties with various methods including TR-PL technique.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joon-Suh Park, Jihoon Kyhm, Hyungduk Ko, Jin Dong Song, Eunkyeom Kim, and Il Ki Han "Down-conversion effect on GaAs single junction solar cell using CdSe quantum dots", Proc. SPIE 8824, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion IV, 882413 (25 September 2013); https://doi.org/10.1117/12.2024768
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Cited by 1 scholarly publication.
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KEYWORDS
Solar cells

Gallium arsenide

Solar energy

Quantum dots

External quantum efficiency

Photons

Ultraviolet radiation

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