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18 September 2013 Flexible transistor active matrix array with all screen-printed electrodes
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Abstract
Flexible transistor active matrix array is fabricated on PEN substrate using all screen-printed gate, source and drain electrodes. Parylene-C and DNTT act as gate dielectric layer and semiconductor, respectively. The transistor possesses high mobility (0.33 cm2V-1 s-1), large on/off ratio (< 106) and low leakage current (~10 pA). Active matrix array consists of 10×10 transistors were demonstrated. Transistors exhibited average mobility of 0.29 cm2V-1s-1 and on/off ratio larger than 104 in array form. In the transistor array, we achieve 75μm channel length and a size of 2 mm × 2 mm for each element in the array which indicates the current screen-printing method has large potential in large-area circuits and display applications.
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Boyu Peng, Jiawei Lin, and Paddy K. L. Chan "Flexible transistor active matrix array with all screen-printed electrodes", Proc. SPIE 8831, Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI, 883116 (18 September 2013); https://doi.org/10.1117/12.2022621
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