Paper
30 September 2013 Novel reactive chemical mechanical polishing technology for fabrication of SiC mirrors
Rajiv K. Singh, Arul Chakkaravarthi Arjunan, Kannan Balasundaram, Puneet Jawali, George Ling, Deepika Singh, William Everson
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Abstract
A new reactive chemical mechanical polishing process has been developed and optimized for polishing CVD SiC mirror samples. The studies show that the abrasives, chemical nature of the slurry, and other additives play an important role in the material removal rate and surface finish of the SiC mirror. The use of different abrasive types and sizes resulted in differing roughness and removal rates. The smaller abrasives created surface defectivity or higher roughness. This can be explained by different polishing rates of different orientations of SiC grains, resulting in the grain enhancement. Under optimal conditions with appropriate abrasive particles, roughness RMS as low as 0.2 nm was achieved on CVD SiC samples. The process also did not show any scratch-like features in the optical interferometry measurements.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rajiv K. Singh, Arul Chakkaravarthi Arjunan, Kannan Balasundaram, Puneet Jawali, George Ling, Deepika Singh, and William Everson "Novel reactive chemical mechanical polishing technology for fabrication of SiC mirrors", Proc. SPIE 8837, Material Technologies and Applications to Optics, Structures, Components, and Sub-Systems, 88370H (30 September 2013); https://doi.org/10.1117/12.2024765
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Cited by 3 scholarly publications.
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KEYWORDS
Polishing

Silicon carbide

Surface finishing

Mirrors

Particles

Diamond

Abrasives

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