Nanotransistor based THz plasma detectors: low tempeatures, graphene, linearity, and circular polarization studies

W. Knap; D. But; N. Diakonova; D. Coquillat; M. S. Vitiello; S. Blin; A. El Fatimy; F. Teppe; A. Tredicucci; T. Nagatsuma; S. Ganichev

doi:10.1117/12.2024206

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24 September 2013 Nanotransistor based THz plasma detectors: low tempeatures, graphene, linearity, and circular polarization studies

W. Knap, D. But, N. Diakonova, D. Coquillat, M. S. Vitiello, S. Blin, A. El Fatimy, F. Teppe, A. Tredicucci, T. Nagatsuma, S. Ganichev

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Proceedings Volume 8846, Terahertz Emitters, Receivers, and Applications IV; 88460M (2013) https://doi.org/10.1117/12.2024206
Event: SPIE Optical Engineering + Applications, 2013, San Diego, California, United States

Abstract

Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-of frequency. This work is an overview of some recent results concerning the low temperatures operation, linearity, and circular polarization studies of nanometer scale field effect transistors for the detection of terahertz radiation. Also first results on graphene transistors are discussed.

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W. Knap, D. But, N. Diakonova, D. Coquillat, M. S. Vitiello, S. Blin, A. El Fatimy, F. Teppe, A. Tredicucci, T. Nagatsuma, and S. Ganichev "Nanotransistor based THz plasma detectors: low tempeatures, graphene, linearity, and circular polarization studies", Proc. SPIE 8846, Terahertz Emitters, Receivers, and Applications IV, 88460M (24 September 2013); https://doi.org/10.1117/12.2024206

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