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25 September 2013 Active gating as a method to inhibit the crosstalk of single photon avalanche diodes in a shared well
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Abstract
Advances in SPAD arrays propose improving the fill factor by confining several SPADs in the same well, with a main issue related to crosstalk. For measurements triggered only in well-defined time periods that can be known in advance, the pixels can be inhibited before the arrival of the crosstalk charge. This paper reports the crosstalk characterization of in an array of SPADs fabricated in a conventional CMOS technology in the same n-well (fill factor 67%). A long gating time gives a crosstalk not less than 2.75%, while reducing it below 2.5 ns completely eliminates crosstalk, as predicted by the theory and by TCAD simulations.
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Anna Vilà, Eva Vilella, Andreu Montiel, Oscar Alonso, and Angel Dieguez "Active gating as a method to inhibit the crosstalk of single photon avalanche diodes in a shared well", Proc. SPIE 8847, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VII, 88470S (25 September 2013); https://doi.org/10.1117/12.2024212
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