Boron selenide semiconductor detectors for thermal neutron counting

Alireza Kargar; Joshua Tower; Leonard Cirignano; Kanai Shah

doi:10.1117/12.2027078

26 September 2013 Boron selenide semiconductor detectors for thermal neutron counting

Alireza Kargar, Joshua Tower, Leonard Cirignano, Kanai Shah

Proceedings Volume 8852, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV; 88521M (2013) https://doi.org/10.1117/12.2027078
Event: SPIE Optical Engineering + Applications, 2013, San Diego, California, United States

Abstract

Thermal neutron detectors in planar configuration were fabricated from B₂Se₃ (Boron Selenide) crystals grown at RMD Inc. All fabricated semiconductor devices were characterized for the current-voltage (I-V) characteristic and neutron counting measurement. In this study, the resistivity of crystals is reported and the collected pulse height spectra are presented for devices irradiated with the ²⁴¹AmBe neutron source. Long-term stability of the B₂Se₃ devices for neutron detection under continuous bias and without being under continuous bias was investigated and the results are reported. The B₂Se₃ devices showed response to thermal neutrons of the 2⁴¹AmBe source.

Citation Download Citation

Alireza Kargar, Joshua Tower, Leonard Cirignano, and Kanai Shah "Boron selenide semiconductor detectors for thermal neutron counting", Proc. SPIE 8852, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV, 88521M (26 September 2013); https://doi.org/10.1117/12.2027078

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