EUV patterned mask inspection system using a projection electron microscope technique

Hidehiro Watanabe; Ryoichi Hirano; Susumu Iida; Tsuyoshi Amano; Tsuneo Terasawa; Masahiro Hatakeyama; Takeshi Murakami; Shoji Yoshikawa; Kenji Terao

doi:10.1117/12.2027566

9 September 2013 EUV patterned mask inspection system using a projection electron microscope technique

Hidehiro Watanabe, Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Tsuneo Terasawa, Masahiro Hatakeyama, Takeshi Murakami, Shoji Yoshikawa, Kenji Terao

Author Affiliations +

Proceedings Volume 8880, Photomask Technology 2013; 88800U (2013) https://doi.org/10.1117/12.2027566
Event: SPIE Photomask Technology, 2013, Monterey, California, United States

Abstract

The concept and the current status of a newly developed PEM pattern inspection system are presented. An image-processing technique with learning functions to enhance the system’s detection capability is investigated. Highly accelerated electrons employed here in electron-optics function as an enabler to improve the image resolution and transmittance in the system, and to acquire an image contrast of 0.5 in a half pitch (hp) 64 nm lines and space pattern. This process also results in the formation of an electron image with more than 3000 electrons per pixel on a sensor. The image-processing system was also developed for die-to-die inspection. The alignment error is minimized to a negligibly small size by a continuous 2D pattern matching. An ensemble of signal characteristics enables the identification of any defect signal in a noisy electron image. The developed detection system met the requirements for hp16 nm generation.

Citation Download Citation

Hidehiro Watanabe, Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Tsuneo Terasawa, Masahiro Hatakeyama, Takeshi Murakami, Shoji Yoshikawa, and Kenji Terao "EUV patterned mask inspection system using a projection electron microscope technique", Proc. SPIE 8880, Photomask Technology 2013, 88800U (9 September 2013); https://doi.org/10.1117/12.2027566

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