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9 September 2013 EUV patterned mask inspection system using a projection electron microscope technique
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The concept and the current status of a newly developed PEM pattern inspection system are presented. An image-processing technique with learning functions to enhance the system’s detection capability is investigated. Highly accelerated electrons employed here in electron-optics function as an enabler to improve the image resolution and transmittance in the system, and to acquire an image contrast of 0.5 in a half pitch (hp) 64 nm lines and space pattern. This process also results in the formation of an electron image with more than 3000 electrons per pixel on a sensor. The image-processing system was also developed for die-to-die inspection. The alignment error is minimized to a negligibly small size by a continuous 2D pattern matching. An ensemble of signal characteristics enables the identification of any defect signal in a noisy electron image. The developed detection system met the requirements for hp16 nm generation.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hidehiro Watanabe, Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Tsuneo Terasawa, Masahiro Hatakeyama, Takeshi Murakami, Shoji Yoshikawa, and Kenji Terao "EUV patterned mask inspection system using a projection electron microscope technique", Proc. SPIE 8880, Photomask Technology 2013, 88800U (9 September 2013);

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