EUV patterned mask inspection system using a projection electron microscope technique

Hidehiro Watanabe; Ryoichi Hirano; Susumu Iida; Tsuyoshi Amano; Tsuneo Terasawa; Masahiro Hatakeyama; Takeshi Murakami; Shoji Yoshikawa; Kenji Terao

doi:10.1117/12.2027566

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9 September 2013 EUV patterned mask inspection system using a projection electron microscope technique

Hidehiro Watanabe, Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Tsuneo Terasawa, Masahiro Hatakeyama, Takeshi Murakami, Shoji Yoshikawa, Kenji Terao

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Proceedings Volume 8880, Photomask Technology 2013; 88800U (2013) https://doi.org/10.1117/12.2027566
Event: SPIE Photomask Technology, 2013, Monterey, California, United States

Abstract

The concept and the current status of a newly developed PEM pattern inspection system are presented. An image-processing technique with learning functions to enhance the system’s detection capability is investigated. Highly accelerated electrons employed here in electron-optics function as an enabler to improve the image resolution and transmittance in the system, and to acquire an image contrast of 0.5 in a half pitch (hp) 64 nm lines and space pattern. This process also results in the formation of an electron image with more than 3000 electrons per pixel on a sensor. The image-processing system was also developed for die-to-die inspection. The alignment error is minimized to a negligibly small size by a continuous 2D pattern matching. An ensemble of signal characteristics enables the identification of any defect signal in a noisy electron image. The developed detection system met the requirements for hp16 nm generation.

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Hidehiro Watanabe, Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Tsuneo Terasawa, Masahiro Hatakeyama, Takeshi Murakami, Shoji Yoshikawa, and Kenji Terao "EUV patterned mask inspection system using a projection electron microscope technique", Proc. SPIE 8880, Photomask Technology 2013, 88800U (9 September 2013); https://doi.org/10.1117/12.2027566

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