Defects on high-resolution negative-tone resist: "The revenge of the blobs"

M. I. Sanchez; L. K. Sundberg; L. D. Bozano; R. Sooriyakumaran; D. P. Sanders; T. Senna; M. Tanabe; T. Komizo; I. Yoshida; A. E. Zweber

doi:10.1117/12.2028753

9 September 2013 Defects on high-resolution negative-tone resist: "The revenge of the blobs"

M. I. Sanchez, L. K. Sundberg, L. D. Bozano, R. Sooriyakumaran, D. P. Sanders, T. Senna, M. Tanabe, T. Komizo, I. Yoshida, A. E. Zweber

Author Affiliations +

Proceedings Volume 8880, Photomask Technology 2013; 88800V (2013) https://doi.org/10.1117/12.2028753
Event: SPIE Photomask Technology, 2013, Monterey, California, United States

Abstract

Resist materials rely on solubility differences between the exposed and unexposed areas to create the desired image. Most negative-tone resists achieve the solubility difference by crosslinking the exposed area causing it to be insoluble in developer. The negative tone resist studied here is a high sensitivity negativetone resist that relies on polarity switching, similar to a positive-tone mechanism, but where the exposed area is insoluble in aqueous developer resulting in a negative-tone image. During mask evaluation for 14nm optical technology applications of the studied non-cross linking (polarity switching) resist, 1 - 5 μm size blob-like defects were found in large numbers under certain exposure conditions. This paper will describe the process and methodologies used to investigate these blob defects.

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M. I. Sanchez, L. K. Sundberg, L. D. Bozano, R. Sooriyakumaran, D. P. Sanders, T. Senna, M. Tanabe, T. Komizo, I. Yoshida, and A. E. Zweber "Defects on high-resolution negative-tone resist: "The revenge of the blobs"", Proc. SPIE 8880, Photomask Technology 2013, 88800V (9 September 2013); https://doi.org/10.1117/12.2028753

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