Phase preservation study on ArF mask for haze-free mask resist strip and cleaning

Irene Shi; Eric Guo; Eric Tian; Tracy Gu; Forrest Jiang; Sandy Qian; Daisuke Matsushima; Jinyuan Pang

doi:10.1117/12.2023019

9 September 2013 Phase preservation study on ArF mask for haze-free mask resist strip and cleaning

Irene Shi, Eric Guo, Eric Tian, Tracy Gu, Forrest Jiang, Sandy Qian, Daisuke Matsushima, Jinyuan Pang

Author Affiliations +

Proceedings Volume 8880, Photomask Technology 2013; 88801L (2013) https://doi.org/10.1117/12.2023019
Event: SPIE Photomask Technology, 2013, Monterey, California, United States

Abstract

Ozonated water, as an alternative to a Sulfuric – Peroxide Mixture (SPM), was introduced to the resist strip and cleaning processes to prevent surface haze formation through the elimination of sulfuric acid from these processes. [1] [2] [3] [4] [5] However, it also was found to cause significant change of optical characteristics and CD-linewidth shift on ArF6% attenuation phaseshift masks (AttPSM). Although the use of 172nm Excimer UV light irradiation treatment before the cleancouldimprove the above-mentioned shifts, after several clean cycle, this phase/CD preservation effect would be dramatically degraded.[6] [7] [8] In this paper, a novel approach of phase preservationto usedry treatments based on reactive plasma Asher as part of acid-free resist strip or cleaning process is introduced. [9][10] We have investigated on the surface material integrity and CD stability of MoSi based shifters and compared with above-mentioned approach of 172nm UV light irradiation treatment, and tried to illustrate and explain the principle. Not only Asher process but also UV irradiation, is supposed to be kind of oxygen activation process to accelerate oxidization on MoSi based shifter of ArF AttPSM masks, and created passivation layer would stand out for wet cleaning; furthermore, plasma Asher process is in prior to UV irradiation. As shown in Cross-section profiles on the masks without and with Asher process, although the deference is very limited, it may be proved that a thin passivation layer was created on the surface and side of MoSi based shifter after Asher process.

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Irene Shi, Eric Guo, Eric Tian, Tracy Gu, Forrest Jiang, Sandy Qian, Daisuke Matsushima, and Jinyuan Pang "Phase preservation study on ArF mask for haze-free mask resist strip and cleaning", Proc. SPIE 8880, Photomask Technology 2013, 88801L (9 September 2013); https://doi.org/10.1117/12.2023019

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KEYWORDS

Oxygen

Photomasks

Photoresist processing

Plasma

Phase shifts

Ultraviolet radiation

Etching

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