AF printability check with a full-chip 3D resist profile model

Cheng-En Rich Wu; Jason Chang; Hua Song; James Shiely

doi:10.1117/12.2027843

16 September 2013 AF printability check with a full-chip 3D resist profile model

Cheng-En Rich Wu, Jason Chang, Hua Song, James Shiely

Author Affiliations +

Proceedings Volume 8880, Photomask Technology 2013; 88802D (2013) https://doi.org/10.1117/12.2027843
Event: SPIE Photomask Technology, 2013, Monterey, California, United States

Abstract

A single compact resist model capable of predicting 3D resist profile is strongly demanded for the advanced technology nodes to avoid the potential hotspots due to imperfect resist pattern shape and its lack of resistance in the subsequent etch process. In this work, we propose a resist 3D (R3D) compact model that takes acidz-diffusion effect into account. The chemical reaction between acid and base along z-direction is treated as second order effect that is absorbed into the anisotropic diffusion length as a fitting parameter. Meanwhile, the resist model in the x-y wafer plane is still kept in general by applying the compact solution of 2D reaction-diffusion equation. In order to have the 2D contour predictability at arbitrary resist height, calibration from entire 3D data (CDs at several heights) areconducted simultaneously witha single cost function so that the R3D compact model is described by a common set of resist free parameters and threshold for all resist heights. With the low energy approximation, the acid z-diffusion effect is equivalent to a z-diffused TCC that takes the form of linear combination of pure optical TCCs sampled at discrete image-depth which can be pre-calculated. With this benefit, the R3D compact model offers a more physical approach but adds no runtime concern on the OPC and verification applications. The predicted resist cross-section profiles from our test patterns are compared those computed with rigorous lithography simulator SLITHO and show very good matching results between them. The demonstration of the AF printability check from the predicted cross-section profile at AF indicates the success of our R3D compact model.

Citation Download Citation

Cheng-En Rich Wu, Jason Chang, Hua Song, and James Shiely "AF printability check with a full-chip 3D resist profile model", Proc. SPIE 8880, Photomask Technology 2013, 88802D (16 September 2013); https://doi.org/10.1117/12.2027843

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