Paper
1 October 2013 Model-based SRAF solutions for advanced technology nodes
Author Affiliations +
Proceedings Volume 8886, 29th European Mask and Lithography Conference; 88860P (2013) https://doi.org/10.1117/12.2031789
Event: 29th European Mask and Lithography Conference, 2013, Dresden, Germany
Abstract
Traditional SRAF placement has been governed by a generation of rules that are experimentally derived based on measurements on test patterns for various exposure conditions. But with the shrinking technology nodes, there are increased challenges in coming up with these rules. Model-based SRAF placement can help in improved overall process window, with less effort. This is true especially for two-dimensional layouts, where SRAF placement conflicts can provide a formidable challenge with varying patterns and sources. This paper investigates the trade-offs and benefits of using model-based SRAF placement over rule-based for various design configurations on a full chip. The impact on cost, time, process-window and performance will be studied. This paper will also explore the benefits and limitations of more complex free-form SRAF and OPC shapes generated by Inverse Lithography Technology (ILT), and strategies for integration into a manufacturable mask.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Srividya Jayaram, Pat LaCour, James Word, and Alexander Tritchkov "Model-based SRAF solutions for advanced technology nodes", Proc. SPIE 8886, 29th European Mask and Lithography Conference, 88860P (1 October 2013); https://doi.org/10.1117/12.2031789
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KEYWORDS
SRAF

Model-based design

Photomasks

Logic

Optical proximity correction

Lithography

Liquid phase epitaxy

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