Paper
18 October 2013 THz devices evaluation in a time domain spectroscopy system at 1.55 μm pulse excitation
Ioannis Kostakis, Alireza Zandieh, Daniel Hailu, Daryoosh Saeedkia, Mohamed Missous
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Abstract
Following the development of efficient THz devices operating at 1550 nm based on low temperature (LT) grown semiconductor compounds, the effect of the substrate of such devices in the generated THz radiation is investigated, a new compact, portable and reconfigurable fiber based THz spectrometer is built and a pair of THz devices are evaluated in the spectrometer. The key findings are firstly the transparency of the InP substrate to THz radiation, which implies that the generated THz signal from these devices is not affected by the substrate, and secondly the development of a THz spectrometer at 1550 nm laser excitation, which can be used for high quality measurements for various material sensing and characterization applications.
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Ioannis Kostakis, Alireza Zandieh, Daniel Hailu, Daryoosh Saeedkia, and Mohamed Missous "THz devices evaluation in a time domain spectroscopy system at 1.55 μm pulse excitation", Proc. SPIE 8900, Millimetre Wave and Terahertz Sensors and Technology VI, 89000V (18 October 2013); https://doi.org/10.1117/12.2029218
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KEYWORDS
Terahertz radiation

Antennas

Spectroscopy

Sensors

Spectroscopes

Signal detection

Signal generators

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