The behavioral approach to silicon carbide power components modeling

Mariusz Zubert; Andrzej Napieralski; Małgorzata Napieralska; Grzegorz Jabłoński; Łukasz Starzak; Marcin Janicki

doi:10.1117/12.2031378

25 July 2013 The behavioral approach to silicon carbide power components modeling

Mariusz Zubert, Andrzej Napieralski, Małgorzata Napieralska, Grzegorz Jabłoński, Łukasz Starzak, Marcin Janicki

Proceedings Volume 8902, Electron Technology Conference 2013; 890206 (2013) https://doi.org/10.1117/12.2031378
Event: Electron Technology Conference 2013, 2013, Ryn, Poland

Abstract

The behavioral and circuit equivalent models applied to silicon carbide semiconductor power devices have been presented. The MOSFET and Merged PiN Schottky diode (MPS) including dynamic electro-thermal modeling have been described in details. The authors also show the problems of the active power estimation for dynamic SiC MPS diode and unrealistic results for manufacturer-provided models.

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Mariusz Zubert, Andrzej Napieralski, Małgorzata Napieralska, Grzegorz Jabłoński, Łukasz Starzak, and Marcin Janicki "The behavioral approach to silicon carbide power components modeling", Proc. SPIE 8902, Electron Technology Conference 2013, 890206 (25 July 2013); https://doi.org/10.1117/12.2031378

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