Paper
25 July 2013 Effective aluminum oxide thin films deposition using reactive pulsed magnetron sputtering: possibilities and limitations
Maciej Gruszka, Witold Posadowski, Zuzanna Sidor, Anna Piotrowska, Artur Wiatrowski
Author Affiliations +
Proceedings Volume 8902, Electron Technology Conference 2013; 89020A (2013) https://doi.org/10.1117/12.2030272
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
Abstract
Thin film chemical compounds can be obtained as a result of sputtering of dielectric target (High-Frequency sputtering) or sputtering of conductive target in reactive atmosphere (Direct Current or pulsed sputtering). Achievement of high efficiency of thin films deposition is possible when conductive target is sputtered, as its surface is not covered (or is covered only partially) with dielectric compound. Aim of this work was obtaining aluminum oxide thin films with highest efficiency, using reactive pulsed magnetron sputtering of aluminum target in Ar+O2 atmosphere.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maciej Gruszka, Witold Posadowski, Zuzanna Sidor, Anna Piotrowska, and Artur Wiatrowski "Effective aluminum oxide thin films deposition using reactive pulsed magnetron sputtering: possibilities and limitations", Proc. SPIE 8902, Electron Technology Conference 2013, 89020A (25 July 2013); https://doi.org/10.1117/12.2030272
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KEYWORDS
Sputter deposition

Thin films

Thin film deposition

Dielectrics

Oxygen

Aluminum

Palladium

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