Modeling the current of a double-gate MOSFET with very thin active region taking into account mobility dependence on the transverse electric field

Lidia Łukasiak; Bogdan Majkusiak

doi:10.1117/12.2031070

25 July 2013 Modeling the current of a double-gate MOSFET with very thin active region taking into account mobility dependence on the transverse electric field

Lidia Łukasiak, Bogdan Majkusiak

Author Affiliations +

Proceedings Volume 8902, Electron Technology Conference 2013; 89020L (2013) https://doi.org/10.1117/12.2031070
Event: Electron Technology Conference 2013, 2013, Ryn, Poland

Abstract

Drain current and transconductance of a symmetrical, undoped double-gate MOSFET is modeled for the first time with mobility depending on both the applied voltage and position in the channel leading to analytical formulae. The obtained models are compared with simplified formulae assuming position-independent effective mobility. Good agreement is obtained in the case of one of the selected mobility models.

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Lidia Łukasiak and Bogdan Majkusiak "Modeling the current of a double-gate MOSFET with very thin active region taking into account mobility dependence on the transverse electric field", Proc. SPIE 8902, Electron Technology Conference 2013, 89020L (25 July 2013); https://doi.org/10.1117/12.2031070

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