Fabrication and characterization of thin-film transistors with amorphous In-Ga-Zn-O layers

A. Taube; J. Kaczmarski; M. Ekielski; D. Pucicki; E. Kamińska; A. Piotrowska

doi:10.1117/12.2031243

25 July 2013 Fabrication and characterization of thin-film transistors with amorphous In-Ga-Zn-O layers

A. Taube, J. Kaczmarski, M. Ekielski, D. Pucicki, E. Kamińska, A. Piotrowska

Proceedings Volume 8902, Electron Technology Conference 2013; 89020N (2013) https://doi.org/10.1117/12.2031243
Event: Electron Technology Conference 2013, 2013, Ryn, Poland

Abstract

We report on the fabrication and performance of amorphous oxide thin-film transistors with In-Ga-Zn-O deposited by RF magnetron reactive sputtering for semiconductor channel layer. The influence of the electrical transport properties of the channel on the electrical parameters of thin-film transistors has been determined. By optimizing process parameters depletion-mode n-channel devices with maximum field-effect mobility (μ_FE) 10.1 cm²/Vs, threshold voltage V_th=-4.85V and on to off current ratio (I_on/I_off)=2.1x10² have been demonstrated.

Citation Download Citation

A. Taube, J. Kaczmarski, M. Ekielski, D. Pucicki, E. Kamińska, and A. Piotrowska "Fabrication and characterization of thin-film transistors with amorphous In-Ga-Zn-O layers", Proc. SPIE 8902, Electron Technology Conference 2013, 89020N (25 July 2013); https://doi.org/10.1117/12.2031243

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