Light generation of DBR/F-P laser based on Raman effect in a silicon-on-insulator rib waveguide

Anna Tyszka-Zawadzka; Paweł Szczepański; Mirosław Karpierz; Agnieszka Mossakowska-Wyszyńska; Mateusz Bugaj

doi:10.1117/12.2030959

25 July 2013 Light generation of DBR/F-P laser based on Raman effect in a silicon-on-insulator rib waveguide

Anna Tyszka-Zawadzka, Paweł Szczepański, Mirosław Karpierz, Agnieszka Mossakowska-Wyszyńska, Mateusz Bugaj

Proceedings Volume 8902, Electron Technology Conference 2013; 89021E (2013) https://doi.org/10.1117/12.2030959
Event: Electron Technology Conference 2013, 2013, Ryn, Poland

Abstract

This paper describes an approximate analysis of Raman generation in silicon-on-insulator (SOI) rib waveguide with DBR/F-P resonator and an integrated p-i-n (PIN) junction, taking into account spatial field distribution and nonlinear effects involved in silicon. These effects comprise especially, stimulated Raman scattering (SRS), free-carrier absorption (FCA), degenerate two-photon absorption (i.e. the pump-pump TPA) and non-degenerate two-photon absorption (i.e. the pump-Stokes TPA and the Stokes-pump TPA). Applying the reverse biased PIN junction allows to reduce the nonlinear optical losses due to TPA-induced FCA. The model is based on the semiclassical approach and an energy theorem. In threshold analysis of steady-state Raman laser operation, an analytical formula relating input pump power to the system parameters is obtained. It allows analyzing the influence of all physical and geometrical parameters on the threshold pump power. The analysis of the above threshold operation is based on the exact energy conservation relation, in which the approximated pump and Stokes field distributions are used. The Stokes field distributions are approximated by that existing at the threshold, whereas the approximate pump field distributions are obtained by integrating the equations for the pump signal using the linear (threshold) pump field distributions and the threshold Stokes field distributions. We obtain an approximate, semi-analytical expression related the Raman output power to the pump power and system parameters.

Citation Download Citation

Anna Tyszka-Zawadzka, Paweł Szczepański, Mirosław Karpierz, Agnieszka Mossakowska-Wyszyńska, and Mateusz Bugaj "Light generation of DBR/F-P laser based on Raman effect in a silicon-on-insulator rib waveguide", Proc. SPIE 8902, Electron Technology Conference 2013, 89021E (25 July 2013); https://doi.org/10.1117/12.2030959

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
10 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Raman spectroscopy

Waveguides

Laser damage threshold

Silicon

Raman scattering

Absorption

Semiconductor lasers

Show All Keywords

Keywords/Phrases

Search In:

Publication Years