Numerical models of magnetic field MEMS sensors used in optoelectronic microsystems

J. Gołębiowski; Sz. Milcarz

doi:10.1117/12.2031529

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25 July 2013 Numerical models of magnetic field MEMS sensors used in optoelectronic microsystems

J. Gołębiowski, Sz. Milcarz

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Proceedings Volume 8902, Electron Technology Conference 2013; 890221 (2013) https://doi.org/10.1117/12.2031529
Event: Electron Technology Conference 2013, 2013, Ryn, Poland

Abstract

The study shows an analysis of numerical models of MEMS transducers used for magnetic field measurements. Movable silicon microbeam structures attached from one side were considered. A ferromagnetic NiFe layer was deposited on the microbeams’ surfaces by magnetron sputtering. In a magnetic field, there is a torque acting on a beam with NiFe layer. There is a change in a deflection angle of a free end of the beam according to the magnetic field strength. The impact of the beam parameters and its attachment on the deflection was analyzed for the tested numerical models of the transducers. An optoelectronic test system can be used to measure the beam’s end deflection. Experimental characteristics obtained from a test system for rotation angle transducers were shown. Range of measurements corresponds to the tested models.

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J. Gołębiowski and Sz. Milcarz "Numerical models of magnetic field MEMS sensors used in optoelectronic microsystems", Proc. SPIE 8902, Electron Technology Conference 2013, 890221 (25 July 2013); https://doi.org/10.1117/12.2031529

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