Large-area transparent in visible range silicon carbide photodiode

M. Borecki; A. Kociubiński; M. Duk; N. Kwietniewski; M. L. Korwin-Pawlowski; P. Doroz; J. Szmidt

doi:10.1117/12.2034797

25 October 2013 Large-area transparent in visible range silicon carbide photodiode

M. Borecki, A. Kociubiński, M. Duk, N. Kwietniewski, M. L. Korwin-Pawlowski, P. Doroz, J. Szmidt

Proceedings Volume 8903, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013; 89030H (2013) https://doi.org/10.1117/12.2034797
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013, 2013, Wilga, Poland

Abstract

This paper describes the construction, fabrication and properties of large-area ultra violet detector that is transparent in the visible range. The device was made on n-type 4H SiC substrate with a double epitaxial layer in which aluminum was implanted to form a p-n junction close to the surface, and a SiO₂ layer was formed for passivation, without a guard ring. The design of the top and bottom electrodes of 4mm diameter UV sensitive area allows not less than 20% visible range transmission. This transmission was measured across sensitive area of examined devices and was only 5% lower than that of the substrate before implantation and electrodes deposition.

Citation Download Citation

M. Borecki, A. Kociubiński, M. Duk, N. Kwietniewski, M. L. Korwin-Pawlowski, P. Doroz, and J. Szmidt "Large-area transparent in visible range silicon carbide photodiode", Proc. SPIE 8903, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013, 89030H (25 October 2013); https://doi.org/10.1117/12.2034797

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