Translator Disclaimer
Paper
25 October 2013 Large-area transparent in visible range silicon carbide photodiode
Author Affiliations +
Proceedings Volume 8903, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013; 89030H (2013) https://doi.org/10.1117/12.2034797
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013, 2013, Wilga, Poland
Abstract
This paper describes the construction, fabrication and properties of large-area ultra violet detector that is transparent in the visible range. The device was made on n-type 4H SiC substrate with a double epitaxial layer in which aluminum was implanted to form a p-n junction close to the surface, and a SiO2 layer was formed for passivation, without a guard ring. The design of the top and bottom electrodes of 4mm diameter UV sensitive area allows not less than 20% visible range transmission. This transmission was measured across sensitive area of examined devices and was only 5% lower than that of the substrate before implantation and electrodes deposition.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Borecki, A. Kociubiński, M. Duk, N. Kwietniewski, M. L. Korwin-Pawlowski, P. Doroz, and J. Szmidt "Large-area transparent in visible range silicon carbide photodiode", Proc. SPIE 8903, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013, 89030H (25 October 2013); https://doi.org/10.1117/12.2034797
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
Back to Top