Dark current characterization and simulation for In0.78Ga0.22As PIN photodetectors

Baiqing Liu; Xiaoli Ji; Yiming Liao; Feng Yan; Henqing Tang; Xue Li; Haimei Gong

doi:10.1117/12.2034957

11 September 2013 Dark current characterization and simulation for In_0.78Ga_0.22As PIN photodetectors

Baiqing Liu, Xiaoli Ji, Yiming Liao, Feng Yan, Henqing Tang, Xue Li, Haimei Gong

Proceedings Volume 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications; 89075A (2013) https://doi.org/10.1117/12.2034957
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

The dark current characterization of In_xGa_1-xAs with x=0.78 have been investigated. Meanwhile, the dark current related deep level trap with E_t= 0.26 eV is detected by using Deep-Level Transient Spectroscopy (DLTS). 2D simulation of dark current shows that SRH recombination, trap-assisted tunneling and band-to-band tunneling currents are the main contributors to the dark current of In_xGa_1-xAs( x=0.78) detector. To further improve the dark current characteristic, we need to improve the material growth.

Citation Download Citation

Baiqing Liu, Xiaoli Ji, Yiming Liao, Feng Yan, Henqing Tang, Xue Li, and Haimei Gong "Dark current characterization and simulation for In_0.78Ga_0.22As PIN photodetectors", Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 89075A (11 September 2013); https://doi.org/10.1117/12.2034957

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