Calculate IR optical constants of Si substrate under high temperature condition

Yugang Jiang; Lishuan Wang; Huasong Liu; Dandan Liu; Chenghui Jiang; Deying Chen; Yaping Yang; Yiqin Ji

doi:10.1117/12.2031884

30 August 2013 Calculate IR optical constants of Si substrate under high temperature condition

Yugang Jiang, Lishuan Wang, Huasong Liu, Dandan Liu, Chenghui Jiang, Deying Chen, Yaping Yang, Yiqin Ji

Proceedings Volume 8910, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Spectrometer Technologies and Applications; 89100C (2013) https://doi.org/10.1117/12.2031884
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

A high temperature infrared spectra measuring equipment connected with a FTIR spectrometer (PE) was designed and manufactured. The measuring temperature can range from room-temperature to 500°C and the infrared spectra of substrates and thin films under different temperature can be real-time measured. The Fourier transform infrared transmission spectra of Si substrate under different working temperature were measured in the wavelength region from 2μm to 20μm using high temperature infrared spectra measuring equipment. The measured temperature ranged from room temperature to 500°C with a step of 50°C. Complex dielectric functions of Si substrate under different temperature condition are calculated from FTIR transmittance spectra by WVASE32 software, and the best fitted method was obtained for calculating optical constants of dielectric materials in the high temperature condition. As the increase of working temperature, the refractive index and extinction coefficient of Si substrate increase, when the working temperature reach 300°C, the various quantity of extinction coefficient sharply increase, so Si substrate can be used in the condition below the temperature of 300°C. Thus, through the exact calculated complex dielectric functions under different working temperature condition, we can design and manufacture different thin films using Si as substrate, and applied in in the high temperature condition.

Citation Download Citation

Yugang Jiang, Lishuan Wang, Huasong Liu, Dandan Liu, Chenghui Jiang, Deying Chen, Yaping Yang, and Yiqin Ji "Calculate IR optical constants of Si substrate under high temperature condition", Proc. SPIE 8910, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Spectrometer Technologies and Applications, 89100C (30 August 2013); https://doi.org/10.1117/12.2031884

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KEYWORDS

Silicon

Temperature metrology

Refractive index

FT-IR spectroscopy

Thin films

Dielectrics

Infrared radiation

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