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9 August 1988 Broad Area Graded Barrier Quantum Well Heterostructure Lasers By Metalorganic Chemical Vapor Deposition For High Power Applications
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Proceedings Volume 0893, High Power Laser Diodes and Applications; (1988) https://doi.org/10.1117/12.944364
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
Graded barrier quantum well (GBQW) heterostructure broad area lasers are capable of high power pulsed and cw operation. In this paper, we describe some of the design issues involving broad area graded barrier quantum well heterostructure lasers grown by metalorganic chemical vapor deposition including the effect of junction heating in cw devices and the effect of various buffer layer structures on laser characteristics. We also outline some high power laser diode results for uncoated broad area devices.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M E Givens, C A Zmudzinski, R P Bryan, and J J Coleman "Broad Area Graded Barrier Quantum Well Heterostructure Lasers By Metalorganic Chemical Vapor Deposition For High Power Applications", Proc. SPIE 0893, High Power Laser Diodes and Applications, (9 August 1988); https://doi.org/10.1117/12.944364
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