Paper
12 March 2014 Watt-level continuous-wave diode lasers at 1180 nm with InGaAs quantum wells
K. Paschke, F. Bugge, G. Blume, D. Feise, W. John, S. Knigge, M. Matalla, H. Wenzel, G. Erbert
Author Affiliations +
Abstract
High-power broad area lasers at 1180 nm were developed based on strained InGaAs quantum wells. The lasers feature a lifetime of more than 1200 h at 1 W and are believed to be a key component for the manufacturing of miniaturized laser modules in the yellow and orange spectrum by single-pass second harmonic generation to bridge the spectral region currently not accessible with direct emitting diode lasers. Future applications are laser cooling of sodium, high resolution glucose content measurements as well as spectroscopy on rare earth elements.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Paschke, F. Bugge, G. Blume, D. Feise, W. John, S. Knigge, M. Matalla, H. Wenzel, and G. Erbert "Watt-level continuous-wave diode lasers at 1180 nm with InGaAs quantum wells", Proc. SPIE 8965, High-Power Diode Laser Technology and Applications XII, 896509 (12 March 2014); https://doi.org/10.1117/12.2037752
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Cited by 4 scholarly publications.
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KEYWORDS
Quantum wells

Semiconductor lasers

Indium gallium arsenide

Waveguide lasers

Continuous wave operation

High power lasers

Reflectivity

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