High power diode lasers emitting from 639 nm to 690 nm

L. Bao; M. Grimshaw; M. DeVito; M. Kanskar; W. Dong; X. Guan; S. Zhang; J. Patterson; P. Dickerson; K. Kennedy; S. Li; J. Haden; R. Martinsen

doi:10.1117/12.2041278

7 March 2014 High power diode lasers emitting from 639 nm to 690 nm

L. Bao, M. Grimshaw, M. DeVito, M. Kanskar, W. Dong, X. Guan, S. Zhang, J. Patterson, P. Dickerson, K. Kennedy, S. Li, J. Haden, R. Martinsen

Author Affiliations +

Proceedings Volume 8965, High-Power Diode Laser Technology and Applications XII; 896512 (2014) https://doi.org/10.1117/12.2041278
Event: SPIE LASE, 2014, San Francisco, California, United States

Abstract

There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT’s released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

Citation Download Citation

L. Bao, M. Grimshaw, M. DeVito, M. Kanskar, W. Dong, X. Guan, S. Zhang, J. Patterson, P. Dickerson, K. Kennedy, S. Li, J. Haden, and R. Martinsen "High power diode lasers emitting from 639 nm to 690 nm", Proc. SPIE 8965, High-Power Diode Laser Technology and Applications XII, 896512 (7 March 2014); https://doi.org/10.1117/12.2041278

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available