Paper
7 March 2014 Fabrication of microelectromechanical systems (MEMS) cantilevers for photoacoustic (PA) detection of terahertz (THz) radiation
R. Newberry, N. Glauvitz, R. A. Coutu Jr., I. R. Medvedev, D. Petkie
Author Affiliations +
Abstract
Historically, spectroscopy has been a cumbersome endeavor due to the relatively large sizes (3ft – 100ft in length) of modern spectroscopy systems. Taking advantage of the photoacoustic effect would allow for much smaller absorption chambers since the photoacoustic (PA) effect is independent of the absorption path length. In order to detect the photoacoustic waves being generated, a photoacoustic microphone would be required. This paper reports on the fabrication efforts taken in order to create microelectromechanical systems (MEMS) cantilevers for the purpose of sensing photoacoustic waves generated via terahertz (THz) radiation passing through a gaseous sample. The cantilevers are first modeled through the use of the finite element modeling software, CoventorWare®. The cantilevers fabricated with bulk micromachining processes and are 7x2x0.010mm on a silicon-on-insulator (SOI) wafer which acts as the physical structure of the cantilever. The devices are released by etching through the wafer’s backside and etching through the buried oxide with hydrofluoric acid. The cantilevers are placed in a test chamber and their vibration and deflection are measured via a Michelson type interferometer that reflects a laser off a gold tip evaporated onto the tip of the cantilever. The test chamber is machined from stainless steel and housed in a THz testing environment at Wright State University. Fabricated devices have decreased residual stress and larger radii of curvatures by approximately 10X.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Newberry, N. Glauvitz, R. A. Coutu Jr., I. R. Medvedev, and D. Petkie "Fabrication of microelectromechanical systems (MEMS) cantilevers for photoacoustic (PA) detection of terahertz (THz) radiation", Proc. SPIE 8973, Micromachining and Microfabrication Process Technology XIX, 897302 (7 March 2014); https://doi.org/10.1117/12.2037376
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KEYWORDS
Photoacoustic spectroscopy

Terahertz radiation

Microelectromechanical systems

Interferometers

Silicon

Finite element methods

Semiconducting wafers

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