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7 March 2014 Tunable MOEMS Fabry-Perot interferometer for miniaturized spectral sensing in near-infrared
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Abstract
This paper presents a novel MOEMS Fabry-Perot interferometer (FPI) process platform for the range of 800 – 1050 nm. Simulation results including design and optimization of device properties in terms of transmission peak width, tuning range and electrical properties are discussed. Process flow for the device fabrication is presented, with overall process integration and backend dicing steps resulting in successful fabrication yield. The mirrors of the FPI consist of LPCVD (low-pressure chemical vapor) deposited polySi-SiN λ/4-thin film Bragg reflectors, with the air gap formed by sacrificial SiO2 etching in HF vapor. Silicon substrate below the optical aperture is removed by inductively coupled plasma (ICP) etching to ensure transmission in the visible – near infra-red (NIR), which is below silicon transmission range. The characterized optical properties of the chips are compared to the simulated values. Achieved optical aperture diameter size enables utilization of the chips in both imaging as well as single-point spectral sensors.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Rissanen, R. Mannila, M. Tuohiniemi, A. Akujärvi, and J. Antila "Tunable MOEMS Fabry-Perot interferometer for miniaturized spectral sensing in near-infrared", Proc. SPIE 8977, MOEMS and Miniaturized Systems XIII, 89770X (7 March 2014); https://doi.org/10.1117/12.2035732
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