Paper
8 March 2014 Radiative and nonradiative decay of excitons in GaN nanowires
Christian Hauswald, Timur Flissikowski, Holger T. Grahn, Lutz Geelhaar, Henning Riechert, Oliver Brandt
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Abstract
GaN nanowires form spontaneously on a wide variety of substrates without suffering from extended defects. However, their quasi-one-dimensional nature causes these structures to have an extended free surface, resulting in a surface-to-volume ratio orders of magnitude larger than that of a planar layer. Additionally, the high nucleation density of spontaneously formed GaN nanowire ensembles results in an unintentional, but inevitable coalescence between individual nanowires. In this work, we investigate the impact of both the surface and the coalescence of nanowires on the recombination dynamics of excitons in GaN nanowire ensembles. Using simple models to simulate the change in recombination dynamics of bound excitons in GaN NWs with varying diameter and coalescence degree, we show that the comparatively short decay times at low temperatures are not generally caused by either of these mechanisms. Furthermore, we demonstrate that the biexponential decay for the donor-bound exciton is also not related to a coexistence of nonradiative and radiative recombination channels, but originates from a coupling of the donor- and acceptor-bound exciton states in the GaN NWs.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christian Hauswald, Timur Flissikowski, Holger T. Grahn, Lutz Geelhaar, Henning Riechert, and Oliver Brandt "Radiative and nonradiative decay of excitons in GaN nanowires", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89860V (8 March 2014); https://doi.org/10.1117/12.2039082
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Cited by 3 scholarly publications.
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KEYWORDS
Excitons

Gallium nitride

Nanowires

Picosecond phenomena

Photomicroscopy

Solids

Statistical analysis

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