Multi-cation oxides with crystalline perfection known from single crystals of Si or Ge are a challenge not only for
basic research but also towards a revolution of oxide electronic materials. Here, we present our approach for the
synthesis of high-quality thin films of multi-cation oxides. We show that our synthesis method, using state-of the-art
molecular beam epitaxy (MBE), facilitates for the design of new materials. We geared our MBE system with a precise
rate control system of each constituent cation flux as well as activated oxygen (O*) and ozone (O3). The resulting
performances of our MBE setup are unmatched with respect to high-quality film growth as well as multi-cation
flexibility by demonstrating growth of various cuprate-, scandate-, argentate-, titanate-, and ruthenate thin films. Such
augmented methods are key to novel materials and go well beyond the artificial stacking of known materials and lattices.
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