Investigation of quantum efficiency in mid-wave infrared (MWIR) InAs/GaSb type-II strained layer superlattice (T2SL) detectors

Lilian Acosta; Brianna Klein; Zhao-Bing Tian; Eric Frantz; Stephen Myers; Nutan Gautam; Ted Schuler-Sandy; Elena Plis; Sanjay Krishna

doi:10.1117/12.2039797

19 February 2014 Investigation of quantum efficiency in mid-wave infrared (MWIR) InAs/GaSb type-II strained layer superlattice (T2SL) detectors

Lilian Acosta, Brianna Klein, Zhao-Bing Tian, Eric Frantz, Stephen Myers, Nutan Gautam, Ted Schuler-Sandy, Elena Plis, Sanjay Krishna

Author Affiliations +

Proceedings Volume 8996, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XI; 89960P (2014) https://doi.org/10.1117/12.2039797
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

The objective of this study is to optimize the absorption in the active region of InAs/GaSb T2SL photodetectors for the realization of high-performance MWIR devices. Two sets of MWIR (λ_{100% cut-off} ~ 5.5μm at 77K) T2SL detectors were realized; one set with varied detector absorber thickness, the other set with varied T2SL period. The T2SL material quality was evaluated on the basis of room temperature photoluminescence (RTPL) and the high-resolution X-ray diffraction (HRXRD) data. Then the device performance was compared using spectral response, dark current and responsivity measurements. Finally, quantum efficiency was calculated and employed as a metric for the definition of the optimal T2SL period and active region thickness. For the first part of the study, a homojunction pin architecture based on 8 monolayers (MLs) InAs/8MLs GaSb T2SL was used. The thickness of the non-intentionally doped absorber layers were 1.5μm, 2.5μm, and 3.5μm. For the second part of the study, unipolar barrier (pBiBn) devices were grown. The thickness of the absorber region and the T2SL constituent InAs layer thicknesses were kept the same (1.5 μm and 8 MLs, respectively) whereas the T2SL constituent GaSb thickness was varied as 6 MLs, 8 MLs, and 10 MLs. We have found that the pin detector with 2.5 μm thick absorber and the pBiBn detector with 8 ML InAs/ 8 ML GaSb T2SL composition are, within the scope of this study, optimal for the realization of MWIR single-element devices and FPAs with corresponding architectures.

Citation Download Citation

Lilian Acosta, Brianna Klein, Zhao-Bing Tian, Eric Frantz, Stephen Myers, Nutan Gautam, Ted Schuler-Sandy, Elena Plis, and Sanjay Krishna "Investigation of quantum efficiency in mid-wave infrared (MWIR) InAs/GaSb type-II strained layer superlattice (T2SL) detectors", Proc. SPIE 8996, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XI, 89960P (19 February 2014); https://doi.org/10.1117/12.2039797

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Sensors

Mid-IR

Gallium antimonide

Quantum efficiency

Diffusion

Photodetectors

Absorption

Show All Keywords

Keywords/Phrases

Search In:

Publication Years