Light up conversion versus light down conversion in radiative cooling of semiconductors

V. K. Malyutenko

doi:10.1117/12.2038476

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19 February 2014 Light up conversion versus light down conversion in radiative cooling of semiconductors

V. K. Malyutenko

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Proceedings Volume 9000, Laser Refrigeration of Solids VII; 90000P (2014) https://doi.org/10.1117/12.2038476
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Aimed to promote light conversion processes for radiative cooling of solids, we consider operation principles and fundamentals of two recently discovered approaches to make semiconductors cooled through photo excitation of free carriers. These are light up conversion that is due to above bandgap thermal-assisted luminescence converting heat into light and light down conversion occurring due to the enhancement of the thermal emission output when the overall energy of multiple below bandgap photons escaping a semiconductor exceeds the energy of a single pumped photon. These two processes come at the cost of the internal energy of an object by causing therefore it cooled. Figures of merit will be the microscopy of the processes, cooler band structure, entropy limitations, cooling power, cooling and power conversion efficiencies, and cooling temperature range.

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V. K. Malyutenko "Light up conversion versus light down conversion in radiative cooling of semiconductors", Proc. SPIE 9000, Laser Refrigeration of Solids VII, 90000P (19 February 2014); https://doi.org/10.1117/12.2038476

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