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27 February 2014 Progress on vertical-cavity surface-emitting laser arrays for infrared illumination applications
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For infrared illumination with wavelength range of 808nm-1064nm, vertical-cavity surface-emitting lasers (VCSELs) offer many advantageous properties including superior beam quality (such as low divergence, circular shape beam and speckle-free image), increased eye safety, high reliability and low manufacturing cost. We report our progress on highpower high-efficiency VCSELs and two dimensional (2D) VCSEL arrays for such illumination applications. GaAs-based VCSEL wafers are grown by MOCVD and processed into either top-emitting or bottom-emitting devices depending on the emission wavelength and applications. Results from both single devices and arrays are presented. In particular, record-high power conversion efficiency (PCE) of 63.4% with 300mW output was achieved from VCSELs at 1064nm. Such VCSELs also operate with <55% PCE at 50C. For a 2mm by 10mm array, 56.4% PCE with 150W output was demonstrated. Using those VCSELs and arrays as building blocks, various high power illuminators ranging from a few Watts to over 100 kiloWatts have been fabricated.
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Delai Zhou, Jean-Francois Seurin, Guoyang Xu, Alexander Miglo, Daizong Li, Qing Wang, Mukta Sundaresh, Sam Wilton, Joe Matheussen, and Chuni Ghosh "Progress on vertical-cavity surface-emitting laser arrays for infrared illumination applications", Proc. SPIE 9001, Vertical-Cavity Surface-Emitting Lasers XVIII, 90010E (27 February 2014);

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