Quantum band engineering of nitride semiconductors for infrared lasers

O. Malis; C. Edmunds; D. Li; J. Shao; G. Gardner; W. Li; P. Fay; M. J. Manfra

doi:10.1117/12.2036286

27 February 2014 Quantum band engineering of nitride semiconductors for infrared lasers

O. Malis, C. Edmunds, D. Li, J. Shao, G. Gardner, W. Li, P. Fay, M. J. Manfra

Proceedings Volume 9002, Novel In-Plane Semiconductor Lasers XIII; 90021D (2014) https://doi.org/10.1117/12.2036286
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

The III-nitride semiconductors have been proposed as candidate materials for new quantum cascade lasers in the nearinfrared (1.5-3 μm), and far-infrared (30-60 μm), due to the large conduction-band offset between GaN and Alcontaining alloys (>1 eV), and the large longitudinal optical (LO) phonon energy (90 meV), respectively. The challenges of III-nitride intersubband devices are twofold: material and design related. Due to large electron effective mass, the nitride intersubband materials require the ability to fine-tune the atomic structure at an unprecedented sub-nanometer level. Moreover, the III-N materials exhibit built-in polarization fields that complicate the design of intersubband lasers. This paper presents recent results on c-plane nitride resonant-tunneling diodes that are important for the prospects of farinfrared nitride lasers. We also report near-infrared absorption and photocurrent measurements in nonpolar (m-plane) AlGaN/GaN superlattices.

Citation Download Citation

O. Malis, C. Edmunds, D. Li, J. Shao, G. Gardner, W. Li, P. Fay, and M. J. Manfra "Quantum band engineering of nitride semiconductors for infrared lasers", Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90021D (27 February 2014); https://doi.org/10.1117/12.2036286

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